Performance Enhancement Strategy of Ultra-Thin CIGS Solar Cells
- 1 Département de Physique, Laboratoire de Matériaux et Environnement (LA.M.E)-UFR/SEA, Université Joseph Ki-ZERBO, Ouagadougou, Burkina Faso
Abstract
In this article, numerical modeling and simulation using SCAPS-1D software has been used to explore the performance of CIGS-based solar cells when some parameters are modified. Starting from a baseline model that rigorously reproduces the experimental results, the absorber properties such as defect density, band-gap and acceptor concentration have been investigated and the optimal values to obtain high-efficiency CIGS-base solar cells have been proposed. The optimal parameters obtained are used to develop a new ultra-thin CIGS cell architecture. The results suggest that the use of 1000 nm Electron Back Reflector (EBR) layer with 1.3 eV band-gap at the CIGS/Mo interface provides higher electrical parameters than standard cells and materials such as MoS2, AgO, SnS, Cu2Te, CdSnP2, CuIn5S8, PbCuSbS3 can be successful EBR in ultra-thin CIGS solar cells. This optimized structure provides a serious pathway toward the development of ultra-thin cells with performance close to the best CIGS cells with standard thicknesses.
DOI: https://doi.org/10.3844/ajassp.2020.246.255
Copyright: © 2020 Soumaïla Ouédraogo, Boureima Traoré, Marcel Bawindsom Kébré, Daouda Oubda, Adama Zongo, Issiaka Sankara and François Zougmoré. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
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Keywords
- Cu(In, Ga)Se2
- Band-Gap
- Defect Density
- Electron Reflector